Steady‐state velocity field characteristics for photoexcitedminorityelectrons inp‐In0.53Ga0.47As are reported. A low‐field drift mobility of 6000 cm2/V s for ∼1017cm−3impurities and a high‐field drift velocity of 2.6×107cm/s at 7.5 kv/cm are found. There is no evidence of transferred electron effects, a result which we attribute to energy scattering by holes and which leads to an enhancement of electron drift velocity.