Defects in silicon substrates
作者:
S. M. Hu,
期刊:
Journal of Vacuum Science and Technology
(AIP Available online 1977)
卷期:
Volume 14,
issue 1
页码: 17-31
ISSN:0022-5355
年代: 1977
DOI:10.1116/1.569117
出版商: American Vacuum Society
数据来源: AIP
摘要:
This paper reviews some defects of major importance in silicon substrates: their nature and geometrical distribution; the mechanism of formation; their interplays; and their implications. Topics discussed include swirl aggregates of point‐defect clusters and dislocation clusters; dislocations generated by thermal stresses; stacking faults generated by thermal oxidation both on the surface and in the bulk of substrates; and clustering and precipitation of oxygen.
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