Ann‐GaAs/p‐GaSb heterojunction intercell Ohmic contact (IOC) has been formed by a laser bonding procedure. Resistance per unit area of 5×10−3&OHgr;‐cm2has been obtained as an upper limit. This IOC is able to provide sufficiently good electrical connection between two adjacent subcells of a monolithic multicolor solar converter operating at several hundred suns concentration with the insignificantI2Rloss.