Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding
作者:
Marin Alexe,
Gerhard Ka¨stner,
Dietrich Hesse,
Ulrich Go¨sele,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 25
页码: 3416-3418
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119189
出版商: AIP
数据来源: AIP
摘要:
A novel fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding has been demonstrated. PolycrystallineBi4Ti3O12ferroelectric thin films were deposited on 3 in. silicon wafers using chemical solution deposition. The films were polished and then directly bonded to silicon wafers in a micro-cleanroom. After thermal annealing in air at 500 °C for 12 h, the bonding energy increases up to1.5 J/m2.High resolution transmission electron microscopy shows the difference between the bonded and reacted interfaces. Obtaining a metal-ferroelectric-silicon (MFS) structure containing the ferroelectric-Si bonded interface was achieved by polishing down and etching the handling wafer. TheBi4Ti3O12film kept its ferroelectric properties as shown byC–Vmeasurement. ©1997 American Institute of Physics.
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