Correlations between electron mobility, minority‐carrier lifetime, impurity concentration, and dislocation density have been studied in LEC (liquid‐encapsulated Czochralski)‐grown InP single crystals. Mobilities approaching 30 000 cm2/V s at 77 K, which correspond to compensation ratios of 0.2–0.4, have been obtained. Hole lifetimes as high as 3 &mgr;s have been obtained in dislocation‐free single crystals. The experimental results for lifetimes can be explained by a simple model in which dislocation and impurity are considered as recombination centers.