OBSERVATION OF CURRENT FILAMENTS IN SEMI‐INSULATING GaAs
作者:
A. M. Barnett,
H. A. Jensen,
期刊:
Applied Physics Letters
(AIP Available online 1968)
卷期:
Volume 12,
issue 10
页码: 341-342
ISSN:0003-6951
年代: 1968
DOI:10.1063/1.1651844
出版商: AIP
数据来源: AIP
摘要:
Two‐carrier injection into semi‐insulators can cause a current controlled negative resistance. The observation of current filaments in the high conductance region has been reported for an indirect energy gap semiconductor, silicon, at 77°K. These current filaments have now been observed in gallium arsenide, a direct energy gap semiconductor, at room temperature.
点击下载:
PDF
(137KB)
返 回