Comments on the steady state photocarrier grating technique to measure diffusion lengths
作者:
S. Prabhu,
K. L. Narasimhan,
D. K. Sharma,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 71,
issue 11
页码: 5727-5727
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.350512
出版商: AIP
数据来源: AIP
摘要:
The steady state photocarrier grating technique has emerged as an important technique for measurement of the diffusion length in amorphous silicon. In this communication we show that morphological inhomogeneities lead to an overestimation of the magnitude of the diffusion length. The magnitude of this error cannot be easily estimated.
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