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Comments on the steady state photocarrier grating technique to measure diffusion lengths

 

作者: S. Prabhu,   K. L. Narasimhan,   D. K. Sharma,  

 

期刊: Journal of Applied Physics  (AIP Available online 1992)
卷期: Volume 71, issue 11  

页码: 5727-5727

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.350512

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The steady state photocarrier grating technique has emerged as an important technique for measurement of the diffusion length in amorphous silicon. In this communication we show that morphological inhomogeneities lead to an overestimation of the magnitude of the diffusion length. The magnitude of this error cannot be easily estimated.

 

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