Fabrication of 0.1 &mgr;m metal oxide semiconductor field‐effect transistors with the atomic force microscope
作者:
S. C. Minne,
H. T. Soh,
Ph. Flueckiger,
C. F. Quate,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 6
页码: 703-705
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114105
出版商: AIP
数据来源: AIP
摘要:
Using the atomic force microscope (AFM), we have fabricated a metal oxide semiconductor field‐effect transistor (MOSFET) on silicon with an effective channel length of 0.1 &mgr;m. The lithography at the gate level was performed with the scanning tip of the AFM. The gate was defined by electric‐field‐enhanced selective oxidation of the amorphous silicon gate electrode. The electrical characteristics were reasonable with a transconductance of 279 mS/mm and a threshold voltage of 0.55 V. ©1995 American Institute of Physics.
点击下载:
PDF
(293KB)
返 回