Photothermal imaging of copper‐decorated grain boundary in silicon
作者:
L. J. Inglehart,
A. Broniatowski,
D. Fournier,
A. C. Boccara,
F. Lepoutre,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 18
页码: 1749-1751
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103088
出版商: AIP
数据来源: AIP
摘要:
Using a scanning photothermal reflectance microscope we have observed a large enhancement of the modulated reflectance signal accompanied by a phase change of &pgr; in the region of a copper‐decorated grain boundary in silicon. A preliminary analysis of the data is given in terms of the thermal and plasma waves generated in the specimen. Orders of magnitude of recombination velocities of the surface and the boundary are determined in reasonable agreement with electrical measurements.
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