Synthesis of gallium nitride quantum dots through reactive laser ablation
作者:
Timothy J. Goodwin,
Valerie J. Leppert,
Subhash H. Risbud,
Ian M. Kennedy,
Howard W. H. Lee,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 23
页码: 3122-3124
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119109
出版商: AIP
数据来源: AIP
摘要:
Nanocrystalline GaN was synthesized through reactive laser ablation of gallium metal in aN2atmosphere. X-ray diffraction, selected-area electron diffraction, and transmission electron microscopy measurements show that the GaN crystallites are as small as 2 nm in diameter, and follow a log-normal size distribution with a mean particle diameter of 12 nm. Size-selective photoluminescence and photoluminescence excitation spectroscopy reveal a continuous range of blueshifted band-edge emissions and absorptions starting from the bulk value for gallium nitride and continuing to below 300 nm. These results are consistent with a GaN particle size distribution that encompasses regions above and below the excitonic-Bohr radius of GaN, such that the GaN material shows combined bulk and quantum confined optical properties. ©1997 American Institute of Physics.
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