Ion beam oxidation for Josephson circuit applications
作者:
S. S. Pei,
R. B. van Dover,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 7
页码: 703-705
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94884
出版商: AIP
数据来源: AIP
摘要:
Niobium‐niobium oxide‐lead Josephson tunnel junctions have been fabricated using reactive ion beam oxidation. High quality junctions were obtained using a low beam voltage without cooling the sample to 77 K during oxidation. AVm∼20 mV was achieved routinely at a beam voltage of 100 V andVm≳30 mV at 67 V. Furthermore, excellent critical current uniformity was demonstrated using a 10‐cm Kaufman ion source with substrate motion implemented. A standard deviation in the critical current of 0.5% was obtained among three hundred and fifty 30×30 &mgr;m windowed junctions laid out over an area of 1.1×0.34 cm.
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