Si3N4‐Si interface formation by catalytic nitridation using nitrogen exposures on alkali metal overlayers and removal of the catalyst: N2/Na/Si (100) 2×1
作者:
P. Soukiassian,
T. M. Gentle,
K. P. Schuette,
M. H. Bakshi,
Z. Hurych,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 51,
issue 5
页码: 346-348
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98436
出版商: AIP
数据来源: AIP
摘要:
Core level photoemission spectroscopy using synchrotron radiation was performed to study the activity of sodium on the nitridation of the (100) face of silicon. At room temperature, the exposition to molecular nitrogen of a Si (100) surface modified by a sodium monolayer induced the formation of a SiNxcompound. The sodium catalyst is removed from the surface by thermal desorption at moderate temperature. Subsequently, a clean (sodium free) Si3N4‐Si interface was formed at a much lower temperature than without the alkali metal.
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