Transferred‐electron photoemission to 1.4 &mgr;m
作者:
J. S. Escher,
R. Sankaran,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 2
页码: 87-88
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.88977
出版商: AIP
数据来源: AIP
摘要:
We report here reflection‐ and transmission‐mode photoemission out to 1.4 &mgr;m from a biased field‐assistedp‐InGaAsP grown onp‐InP photocathode. The quantum yield in transmission is ∼0.1% from 0.9 to 1.4 &mgr;m. Dark current due to impact ionization by injected holes in the depletion region is observed.
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