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Transferred‐electron photoemission to 1.4 &mgr;m

 

作者: J. S. Escher,   R. Sankaran,  

 

期刊: Applied Physics Letters  (AIP Available online 1976)
卷期: Volume 29, issue 2  

页码: 87-88

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.88977

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report here reflection‐ and transmission‐mode photoemission out to 1.4 &mgr;m from a biased field‐assistedp‐InGaAsP grown onp‐InP photocathode. The quantum yield in transmission is ∼0.1% from 0.9 to 1.4 &mgr;m. Dark current due to impact ionization by injected holes in the depletion region is observed.

 

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