Annealing of Radiation Defects in Semiconductors
作者:
W. L. Brown,
W. M. Augustyniak,
T. R. Waite,
期刊:
Journal of Applied Physics
(AIP Available online 1959)
卷期:
Volume 30,
issue 8
页码: 1258-1268
ISSN:0021-8979
年代: 1959
DOI:10.1063/1.1735303
出版商: AIP
数据来源: AIP
摘要:
Radiation induced defects studied through changes in conductivity and Hall coefficient have been observed to anneal in a number of different temperature ranges. Only those processes occurring above 80°K and involving defects created by electron irradiation have been considered in this paper. It has been found that the first annealing process inn‐type germanium occurs at about 50°C and is structure sensitive, apparently to the original chemical donor impurity. Higher temperature annealing processes, observed at about 200°C and previously interpreted as due to direct annihilation of vacancies and interstitials must also be sensitive to other crystal defects. Inp‐type germanium there is a process of rearrangement of a defect center at about 200°K, exhibiting first order kinetics, but with a time constant which is strongly dependent upon the charge state of the defect. At about 120°C the defects inptype apparently anneal out completely, in striking contrast to then‐type case. Less extensive silicon measurements, showing lifetime recovery between 200 and 400°C again indicate through their kinetics the importance of other impurities or defects in the annealing process.
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