Tailoring of trap-related carrier dynamics in low-temperature-grown GaAs
作者:
P. W. E Smith,
S. D. Benjamin,
H. S. Loka,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 9
页码: 1156-1158
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119852
出版商: AIP
数据来源: AIP
摘要:
In this letter, we present the results of an experimental study of low-temperature-grown GaAs, which clearly resolves separately both carrier trapping and recombination processes. We extend our previous model to account for the observed carrier dynamics, and show how the material growth and annealing conditions can be adjusted to optimize the material properties for all-optical device applications. ©1997 American Institute of Physics.
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