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Tellurium and iodine in silicon part II: Hall effect and resistivity measurements on ion implanted silicon

 

作者: G.J. Kemerink,   H. De Waard,   L. Niesen,   D.O. Boerma,  

 

期刊: Radiation Effects  (Taylor Available online 1983)
卷期: Volume 69, issue 1-2  

页码: 101-112

 

ISSN:0033-7579

 

年代: 1983

 

DOI:10.1080/00337578308221728

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The fraction of substitutional Te atoms in silicon deduced from temperature dependent Hall measurements is comparable to that derived from channeling experiments. The donor activation energy of these atoms is found to be about 0.19 eV. Approximately 10% of the Te-atoms give rise to a shallow donor level atEc-0.06 eV and is probably associated with a defect. Substitutional iodine is not electrically active in Si up to 450 K. From this a lower limit of the donor activation energy of 0.30 eV is estimated.

 

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