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Reaction Sintering and Properties of Silicon Oxynitride Densified by Hot Isostatic Pressing

 

作者: Richard Larker,  

 

期刊: Journal of the American Ceramic Society  (WILEY Available online 1992)
卷期: Volume 75, issue 1  

页码: 62-66

 

ISSN:0002-7820

 

年代: 1992

 

DOI:10.1111/j.1151-2916.1992.tb05442.x

 

出版商: Blackwell Publishing Ltd

 

关键词: silicon oxynitride;sintering;hot isostatic pressing;X‐ray diffraction;mechanical properties

 

数据来源: WILEY

 

摘要:

Silicon oxynitride ceramics were reaction sintered and fully densified by hot isostatic pressing in the temperature range 1700°C to 1950°C from an equimolar mixture of silicon nitride and silica powders without additives. Conversion to Si2N2O increases steeply from a level around 5% of the crystalline phases at 1700°C to 80% at 1800°C, and increases a few percent further at higher temperatures.α‐Si3N4is the major residual crystalline phase below 1900°C. The hardness level for materials containing 85% Si2N2O is approximately 19 GPa, comparable with the hardness of Si3N4hot isostatically pressed with 2.5 wt% Y2O3, while the fracture toughness level is around 3.1 MPa. m1/2, being approximately 0.8 MPa.m1/2lower. The three‐point bending strength increased with HIP temperature from approximately 300 t

 

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