Reaction Sintering and Properties of Silicon Oxynitride Densified by Hot Isostatic Pressing
作者:
Richard Larker,
期刊:
Journal of the American Ceramic Society
(WILEY Available online 1992)
卷期:
Volume 75,
issue 1
页码: 62-66
ISSN:0002-7820
年代: 1992
DOI:10.1111/j.1151-2916.1992.tb05442.x
出版商: Blackwell Publishing Ltd
关键词: silicon oxynitride;sintering;hot isostatic pressing;X‐ray diffraction;mechanical properties
数据来源: WILEY
摘要:
Silicon oxynitride ceramics were reaction sintered and fully densified by hot isostatic pressing in the temperature range 1700°C to 1950°C from an equimolar mixture of silicon nitride and silica powders without additives. Conversion to Si2N2O increases steeply from a level around 5% of the crystalline phases at 1700°C to 80% at 1800°C, and increases a few percent further at higher temperatures.α‐Si3N4is the major residual crystalline phase below 1900°C. The hardness level for materials containing 85% Si2N2O is approximately 19 GPa, comparable with the hardness of Si3N4hot isostatically pressed with 2.5 wt% Y2O3, while the fracture toughness level is around 3.1 MPa. m1/2, being approximately 0.8 MPa.m1/2lower. The three‐point bending strength increased with HIP temperature from approximately 300 t
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