Ionized Mg doping in molecular‐beam epitaxy of GaAs
作者:
M. Mannoh,
Y. Nomura,
K. Shinozaki,
M. Mihara,
M. Ishii,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 59,
issue 4
页码: 1092-1095
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.336545
出版商: AIP
数据来源: AIP
摘要:
Using ionized Mg beams accelerated to energies from 130 to 500 eV, Mg doping was studied in molecular‐beam epitaxy of GaAs. The incorporation coefficient of Mg increases by a factor of about 100 when compared with the use of neutral Mg beams. Hole concentrations as high as about 1×1019cm−3have been achieved. Photoluminescence measurements suggest that the damage due to Mg‐ion bombardment is negligible when the ion accelerating voltage (Va) ≲130 V. For higherVa, the damage can be removed by postgrowth annealing.
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