Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile
作者:
S. B. Ogale,
A. Madhukar,
N. M. Cho,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 2
页码: 578-580
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.340092
出版商: AIP
数据来源: AIP
摘要:
Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. Results are presented for two specific types of gradations derived from consideration of typical experimental situations, and comparison is made with the available experimental data.
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