Growth of epitaxial TiN thin films on Si(100) by reactive magnetron sputtering
作者:
C.‐H. Choi,
L. Hultman,
W.‐A. Chiou,
S. A. Barnett,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 2
页码: 221-227
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585597
出版商: American Vacuum Society
关键词: TITANIUM NITRIDES;FILM GROWTH;THIN FILMS;EPITAXY;SPUTTERED MATERIALS;CRYSTAL STRUCTURE;ELECTRON MICROSCOPY;X−RAY DIFFRACTION ANALYSIS;GRAIN ORIENTATION;TiN
数据来源: AIP
摘要:
Growth temperature was found to play a crucial role in determining the structure of stoichiometric TiN films deposited on Si(100) by reactive magnetron sputtering. X‐ray diffraction, transmission electron microscopy (TEM), and reflection high‐energy electron diffraction were used to show that films deposited at substrate temperaturesTsranging from 700 to 1100 °C were polycrystalline, with either (100) preferred orientation or mixed (100) and (111) orientations. Films deposited using a two‐temperature technique were epitaxial with the relationships TiN(100)//Si(100) and TiN[011]//Si[011]but with considerable misorientation. The most highly oriented films were obtained when 45 nm was first deposited atTs=750 °C, followed by 250 nm at 1000 °C. High‐resolution cross‐sectional TEM studies showed that increasing the nucleation temperature above 750 °C led to random orientation of TiN lattice fringes relative to the Si lattice. This was explained by the small energy difference between oriented and misoriented TiN nuclei due to the large lattice mismatch (22%).
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