Closed‐form solutions (integral representations) are obtained for the charge density and current density in the vicinity of a dislocation or a surface which pierces a junction at right angles. The total reduction in luminescence and increase in junction current are obtained as functions of two dimensionless ratios, &egr;, the recombination‐length/diffusion‐length ratio, and &eegr;, the radius‐of‐dislocation/diffusion‐length ratio, where recombination lengtha=D/sis the diffusion constant over surface‐recombination velocity.