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Detection of anomalous defect‐enhanced diffusion using advanced spreading resistance measurements and analysis

 

作者: S. R. Weinzierl,   R. J. Hillard,   J. M. Heddleson,   P. Rai‐Choudhury,   R. G. Mazur,   C. M. Osburn,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 1  

页码: 322-326

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587161

 

出版商: American Vacuum Society

 

关键词: SILICON;MOS JUNCTIONS;DOPING PROFILES;DIFFUSION;ANOMALOUS PROPERTIES;MEASURING METHODS;DATA ANALYSIS;ELECTRIC CONDUCTIVITY;Si;SiO2

 

数据来源: AIP

 

摘要:

Advanced spreading resistance measurements and analysis techniques are used to determine the dopant profiles in two ultra‐shallow silicon metal–oxide–semiconductor source/drain structures which were germanium preamorphized prior to implant. Although the two structures differ only slightly in their anneal temperature and time, there is a significant difference in the metallurgical junction depths of the implants. It is proposed that the difference in junction depths is related to defect‐enhanced transient diffusion.

 

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