Planar faults in MoSi2single crystals deformed at high temperatures
作者:
Y. Umakoshi,
T. Sakagami,
T. Yamane,
T. Hirano,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1989)
卷期:
Volume 59,
issue 4
页码: 159-164
ISSN:0950-0839
年代: 1989
DOI:10.1080/09500838908206338
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Dislocation structure and planar faults have been examined in MoSi2single crystals deformed at high temperatures. Pure stacking faults were found in a crystal deformed at 900°C. The formation of the stacking fault is closely related to the phase stability of the C11band C40 ordered structures. Profuse stacking faults with increasing deformation temperature assist the ductility improvement of the MoSi2above about 1200°C. The critical resolved shear stress for {110}(331) and {013}(331) slip is determined in the temperature range 1000 to 1500°C.
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