Si, Be, and C ion implantation in GaAs0.93P0.07
作者:
J. W. Lee,
K. N. Lee,
S. J. Pearton,
C. R. Abernathy,
W. S. Hobson,
H. Han,
J. C. Zolper,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 4
页码: 2296-2299
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363059
出版商: AIP
数据来源: AIP
摘要:
The activation efficiencies of implanted Si, Be, and C in GaAs0.93P0.07have been measured in the annealing range 650–950 °C. Be provides much higher sheet hole densities than C, even when the latter is coimplanted with Ar to enhance the electrical activity. The maximum activation efficiency of Be is ∼60% at a dose of 5×1014cm2whereas that of C is an order of magnitude lower. Si produces donor activation percentages up to ∼20% under optimized annealing conditions. Capless proximity annealing is adequate for surface preservation up to ∼950 °C, as measured by scanning electron microscopy and atomic force microscopy. Photoluminescence measurements provide evidence that nonradiative, damage‐related point defects remain in the GaAsP even after annealing of 950 °C. ©1996 American Institute of Physics.
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