Optically enhanced oxidation of III‐V compound semiconductors
作者:
Mitsuo Fukuda,
Kenichiro Takahei,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 1
页码: 129-134
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335375
出版商: AIP
数据来源: AIP
摘要:
Oxidation of III‐V compound semiconductor (110) cleaved surfaces under light irradiation is studied. The light irradiation enhanced the reaction rate of oxidation but the relationship between oxide growth and oxidation time under logarithmic law scarcely changed within this experimental range. The oxidation trend observed under light irradiation is similar to that of thermal oxidation for GaP, GaAs, InP, InAs, InGaAs, and InGaAsP. Semiconductors having As as the V element tend to be easily oxidized, while those of the above mentioned six kinds of materials having Ga as the III element are quickly oxidized in their initial stage. Ternary and quaternary compound semiconductors have less tendency to be oxidized compared to their constituent binary materials. off
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