Modeling the temperature response of 4H silicon carbide junction field-effect transistors
作者:
C. J. Scozzie,
F. B. McLean,
J. M. McGarrity,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7687-7689
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365349
出版商: AIP
数据来源: AIP
摘要:
The electrical characteristics of 4H-SiC depletion-mode junction field-effect transistors (JFETs) have been measured over an extended temperature range from 218 to 673 K. A basic model has been applied to predictI–Vcharacteristics for SiC JFETs over this extended temperature range using the standard abrupt-junction long-channel JFET equations. The model employs a two-level donor ionization structure using ionization energies of 0.050 and 0.080 eV and assumes a two-step inverse power law dependence of mobility on temperature based on recently published Hall measurement data. The modeledI–Vcharacteristics are in good agreement with the experimental data over the temperature range from 273 to 673 K. The deviations between the experimental data and the response model at the temperature extremes are attributed to increased substrate resistivity at 218 K and increased device leakage currents at 673 K.
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