The density of localized states at the interface between as‐deposited 51 at. % semi‐insulating polycrystalline silicon and silicon has been measured using the conductance technique. Aluminum‐gated metal‐insulator‐semiconductor structures were made onn‐n+andp‐p+epilayered silicon and full details of capacitance‐voltage and conductance‐voltage characteristics are given. The interface state response is shown to fit the statistical model and comparisons with the Si‐SiO2interface were made. The density of states is found to be between ∼6×1010cm−2 eV−1near midgap rising to ∼6×1011cm−2 eV−1at the band edges.