Data are presented on stripe‐geometry gain‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation (‘‘hydrogenation’’) of the Mg and Se dopants in the multiple layer heterostructure. Continuous room‐temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near‐field emission patterns show strong current confinement in the stripe‐active region, and significant hydrogenation ‘‘undercutting’’ of the oxide mask.