The capability of misfit dislocations to generate nanostructures in the bulk ofSi1−xGex/Siheteroepitaxial systems is demonstrated. It is shown that dislocation slip originating from compositionally gradedSi1−xGexlayers can produce a range of low-dimensional structures including nanowires, nanodots, and mosaic superlattices. Formation of the nanostructures is achieved in parallel processing, through a simple two-step cycle which includes growth of layered planar structures and postgrowth annealing. ©1997 American Institute of Physics.