Low pressure chemical vapor deposition (LPCVD) of SiO2in a horizontal LPCVD furnace using liquid diethylsilane and oxygen has been studied. A temperature deposition window ranging from 425–500 °C was observed resulting in a maximum deposition rate of ∼275 Å/min. The pressure dependence of the deposition rate revealed a threshold of ≳950 mTorr for gas phase reactions at a deposition temperature of 450 °C. Analysis of the films by Rutherford backscattering spectroscopy has indicated that as‐deposited films are stoichiometric SiO2for deposition temperatures ≤450 °C. Best case across wafer uniformity was ±5% for a caged boat. Wet chemical and reactive ion etch rates were found to be comparable to those of thermal oxides after annealing. Cross‐sectional scanning electron microscopy images of the SiO2films deposited on 2 μm deep 1 μm wide silicon trenches revealed a conformality of ∼80%. The electrical properties of films deposited at 450 °C were studied. The electrical properties of the films were studied as‐deposited and after annealing the films in a cold‐wall rapid thermal annealing (RTA) system. RTAs were performed at temperatures ranging from 950 to 1100 °C in Ar, N2, or O2ambients. Current–voltage, current–temperature, and capacitance–voltage measurements were performed for the electrical characterization. Catastrophic breakdown field measurements have shown electric field strengths of 9.5 MV/cm for as‐deposited 500 Å films. A study of the leakage current conduction mechanisms has indicated that as‐deposited films exhibit trap conduction mechanisms at high electric fields and temperatures. However, if deposition is followed by a RTA in Ar or O2, the leakage current follows closely the Fowler–Nordheim mechanism and yields a leakage‐current electric field dependence comparable to a thermal oxide. Results have shown that values as low as 6 × 1010/cm2for fixed charge density can be obtained if oxide deposition is followed by a RTA in Ar or N2.