This paper describes the first lasing experiment of the heterostructure semiconductor Raman laser with a GaP Raman active layer as thin as 15 μm and AlxGa1−xP cladding layers for optical confinement, which should be a step towards realising a semiconductor Raman laser pumped by a semiconductor injection laser applicable to wideband optical communication. Also, the four-layer structure Raman laser is reported, by which the strain-induced optical anisotropy caused by the lattice mismatching can be reduced.