A review of electronic structural data is given and an interface Schottky model has been developed. X-ray photoemission spectroscopy (XPS) and secondary electron emission data have been used to determine the electron affinity of SBT and the band match-up for the SBT/Pt junction. The results of X-ray absorption spectroscopy studies and XPS valence band measurements indicated the electronic states above and below the bandgap of SBT. These experimental data have been compared with the results of tight-binding calculations. Angle dependent XPS measurements indicated that metallic bismuth is diffusing to the surface of SBT which would have significant influence on the electrical properties of the SBT/Pt junction. The hydrogen distribution in SBT, also an inportant issue for the device properties, has been probed using elastic recoil detection.