Purely optical measurement of the resistivity distribution of semi‐insulating InP:Fe by means of the photorefractive effect
作者:
G. Wittmann,
A. Winnacker,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 3
页码: 392-394
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114639
出版商: AIP
数据来源: AIP
摘要:
Electrical homogeneity is an essential requirement for semi‐insulating (SI)InP:Fe wafers. A method is presented to measure the spatial distribution of resistivity at room temperature via the photorefractive effect. The experimental conditions are presented and discussed. The potential of the method is demonstrated by applying it to SI liquid encapsulated Czochralski grown material. ©1995 American Institute of Physics.
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