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Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas

 

作者: M. F. Doemling,   N. R. Rueger,   G. S. Oehrlein,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 68, issue 1  

页码: 10-12

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.116772

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The slowdown of the oxide etch rate with width of submicrometer structures is known as reactive ion etching (RIE) lag and has been explained by ion shadowing and differential charging of the sidewalls, among other effects [R. A. Gottscho and co‐workers, J. Vac. Sci. Technol. B10, 2133 (1992)]. Here we show for an inductively coupled high density plasma reactor working in the pressure regime from 6 to 20 mTorr that inverse RIE lag is primarily observed, i.e., the etch rates increase as the width of the microstructures decrease. Inverse RIE lag, which was first discussed by Vitkavageetal. [Tegal Plasma Proceedings Symposium, San Francisco, 1991 (unpublished)], may be explained by considering the neutral flux distribution at the structure bottom. The neutral flux has a stronger dependence on the aspect ratio than the ion flux due to its isotropic velocity distribution. The neutral flux distribution has been modeled and is consistent with etching profiles observed at high pressure. ©1996 American Institute of Physics.

 

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