A new method has been developed to form ap+‐npolycrystalline‐crystalline junction at low temperature. The technique involves the use of ane‐beam evaporated polycrystalline silicon‐aluminum‐polycrystalline silicon multilayer structure to obtain an Al‐rich polycrystalline film by heat treatment at 600 °C. Experimenal evidence indicates that the current conduction is dominated by electron recombination at the interface between the polycrystalline silicon and the substrate. The best fit between a simple model and expeirmental data yields an effective recombination velocity of 5×104cm/sec, a value consistent with carrier recombination at the grain boundaries of polycrystalline silicon.