Impurity effects on low‐angle boundary formation in silicon single crystals
作者:
M. Ya. Dashevsky,
A. M. Eidenson,
期刊:
Kristall und Technik
(WILEY Available online 1979)
卷期:
Volume 14,
issue 1
页码: 29-36
ISSN:0023-4753
年代: 1979
DOI:10.1002/crat.19790140105
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractThe combined effects of crystal growth conditions and impurity (Sb, P, B, Ga) concentration on low‐angle boundary (LAB) formation in silicon single crystals growing by Czochralski technique was investigated. The dependence of LAB formation frequency and LAB parameters on crystal growth conditions and impurity content was found. Impurity effects on LAB formation become apparent at concentrations of about 1018cm−3. – All impurity investigated decreases the probability of LAB formation, the acceptor impurity influence is stronger. At B concentration exceeding 2 · 1019cm−3LAB formation does not occur. – Results are interpreted in terms of scheme of LAB formation in thermal stress field of growing crystal. To explain observed impurity effects assumptions about dislocation drag and about raising of critical stresses for dislocation generation with dopin
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