Microstructural evolution of Al-Cu thin-film conducting lines during post-pattern annealing
作者:
S. H. Kang,
J. W. Morris,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 1
页码: 196-200
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365760
出版商: AIP
数据来源: AIP
摘要:
This work reports a statistical analysis of the evolution of polygranular segment lengths during high-temperature annealing of Al(Cu) thin-film interconnects with quasi-bamboo microstructures. To create samples of Al(Cu) lines that could be imaged by transmission electron microscopy without breaking or thinning, the lines were deposited on electron-transparent silicon nitride films (the “silicon nitride window” technique). The microstructures of the lines were studied as a function of annealing time and temperature. In particular, the distribution of polygranular segment lengths was measured. The results show that the longer polyglranular segments are preferentially eliminated during post-pattern annealing. As a consequence, the segment-length distribution narrows monotonically during annealing, and changes in shape. The preferential loss of the longest polygranular segments leads to a dramatic increase in resistance to electromigration failure.
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