Resonant Raman scattering work is reported on local vibrational modes (LVM) of Si and Be in highly doped III‐V semiconductors, such as GaAs, InAs, and InSb. Raman scattering by the LVM of Si donors on group‐III lattice sites is found to be strongly enhanced for incident photon energies matching theE1band‐gap energy of the host semiconductor indicating a rather narrow resonance in the scattering cross section. Raman scattering by LVM produced by acceptors, by contrast, is observed for a much wider range of photon energies, which corresponds to a much broader resonance. Possible explanations for this difference in resonance behavior are discussed including resonant donor energy levels derived from theL‐point conduction‐band minima. The present observations demonstrate, further, that attention must be paid to the appropriate choice of incident photon energies in order to achieve maximum sensitivity in a LVM Raman experiment.