Material reaction and silicide formation at the refractory metal/silicon interface
作者:
G. W. Rubloff,
R. M. Tromp,
E. J. van Loenen,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 23
页码: 1600-1602
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96829
出版商: AIP
数据来源: AIP
摘要:
Medium energy ion scattering studies show that material reactions other than interfacial silicide formation dominate the low‐temperature reactivity of the Ti/Si interface. This provides an explanation for the anomalous kinetics and considerable extent (100 A˚ or more) of reaction of refractory metals with Si, which are observed well below the temperatures normally associated with silicide growth in thicker films.
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