Temperature dependence of energy gap in GaN thin film studied by thermomodulation
作者:
Y. Li,
Y. Lu,
H. Shen,
M. Wraback,
M. G. Brown,
M. Schurman,
L. Koszi,
R. A. Stall,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 18
页码: 2458-2460
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118855
出版商: AIP
数据来源: AIP
摘要:
The thermomodulation spectrum from metal organic chemical vapor deposition grown GaN has been measured in the temperature range of 20–310 K. A theoretical model is established to explain the spectrum by considering the modulation of dielectric constant and epilayer thickness. It is found that the latter is especially important for a material system with a large difference in refractive indices between the epilayer and the substrate. The band gap energy and broadening parameter are determined using a lineshape analysis. Varshni coefficients of the energy gap are determined. The temperature dependence of broadening parameter is also measured. ©1997 American Institute of Physics.
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