Diffusion length variation and proton damage coefficients for InP/InxGa1−xAs/GaAs solar cells
作者:
R. K. Jain,
I. Weinberg,
D. J. Flood,
期刊:
Journal of Applied Physics
(AIP Available online 1993)
卷期:
Volume 74,
issue 4
页码: 2948-2950
ISSN:0021-8979
年代: 1993
DOI:10.1063/1.354600
出版商: AIP
数据来源: AIP
摘要:
Indium phosphide solar cells are more radiation resistant than gallium arsenide and silicon solar cells and their growth by heteroepitaxy offers additional advantages leading to the development of lighter, mechanically strong and cost‐effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5 and 3 MeV proton irradiations have been explained by the variation in the minority‐carrier diffusion length. The base diffusion length versus proton fluence has been calculated by simulating the cell performance. The diffusion length damage coefficientKLhas also been plotted as a function of proton fluence.
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