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Solid‐State Detectors for Beta‐Ray Spectroscopy below 4.2°K

 

作者: J. Chin,   A. T. Hirshfeld,   D. D. Hoppes,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1963）
卷期: Volume 34, issue 11  

页码: 1258-1259

 

ISSN:0034-6748

 

年代: 1963

 

DOI:10.1063/1.1718194

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Surface barrier detectors operated at temperatures below 4.2°K are found to be sensitive to beta radiation throughout the volume of the silicon wafer and to give good resolution for conversion electrons (8.3 keV FWHM at 482 keV). The pulse height and resolution for a 1‐mm‐thick wafer are found to improve slightly with increasing reverse bias in the region of 300 to 530 V.

 

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