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Landau level formation in semiconductor quantum dots in a high magnetic field

 

作者: S. Nomura,   L. Samuelson,   M.-E. Pistol,   K. Uchida,   N. Miura,   T. Sugano,   Y. Aoyagi,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 16  

页码: 2316-2318

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120070

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Landau level formations have been observed in the photoluminescence spectra of highly optically populated InP strained self-organized quantum dots in between barriers ofIn0.5Ga0.5Pat a high magnetic field. The results clearly show the evolution of the discrete states caused by 3D confinement at 0 T into Landau level-like structures at 40.9 T. ©1997 American Institute of Physics.

 

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