Dissipative electron tunneling from the phosphorus ground level to the conduction band of silicon
作者:
A. Dargys,
N. Zˇurauskiene˙,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 7
页码: 4802-4804
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359764
出版商: AIP
数据来源: AIP
摘要:
The influence of thermal acoustic vibrations on impurity field ionization is investigated. At lattice temperaturesT<15 K, when tunneling from the ground level predominates, thermal acoustic phonons in silicon are found to enhance phosphorus field ionization. The experiments are compared with recent theoretical calculations, which take into account the deformation potential interaction of thermal acoustic phonons with a localized center. ©1995 American Institute of Physics.
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