首页   按字顺浏览 期刊浏览 卷期浏览 Observation of sidewall contamination in submicron contact holes by thermal desorption ...
Observation of sidewall contamination in submicron contact holes by thermal desorption spectroscopy

 

作者: Yuden Teraoka,   Hidemitsu Aoki,   Eiji Ikawa,   Takamaro Kikkawa,   Iwao Nishiyama,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 6  

页码: 2197-2200

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588103

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM;ASPECT RATIO;ELECTRIC CONTACTS;ETCHING;SEMICONDUCTOR DEVICES;SILICON OXIDES;SURFACE CLEANING;SURFACE CONTAMINATION;SiO2;Al

 

数据来源: AIP

 

摘要:

The etching contamination remaining in Al‐base SiO2contact holes after hole fabrication followed by a series of cleaning treatments was analyzed by using thermal desorption spectroscopy. The hole aspect ratio dependence was measured for fluorinated aluminum molecules, the major desorption species. The amount of contaminant material in the holes was found to increase with the sidewall area of the holes, suggesting that the contaminant material desorbs from the bottom surface and accumulates on the SiO2sidewall during contact hole etching.

 

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