The electrical properties of as‐grown and heat‐treated copper indium diselenide (CuInSe2) thin films electrochemically deposited were measured in the temperature range 30 to about 300 K. In general the films showed variable range hopping conduction mechanism, i.e., &sgr;= (&sgr;0 T−1/2) exp[ − (T0/T)1/4] withT0between 4 × 102and 6 × 103K, at the lowest temperatures, and thermally activated conductivity, i.e., &sgr; = &sgr;0 exp( −Ea/kT) withEabetween 240 and 80 meV, over the temperature range close to the room temperature. The activation energy,Ea, decreased and the conductivity, &sgr;, increased with the annealing treatment. The data of these annealed films are in agreement with the Meyer–Neldel rule. Grain boundary trapping models were considered in the analysis of the results.