Depth-dependent spectroscopic defect characterization of the interface between plasma-depositedSiO2and silicon
作者:
J. Scha¨fer,
A. P. Young,
L. J. Brillson,
H. Niimi,
G. Lucovsky,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 6
页码: 791-793
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122003
出版商: AIP
数据来源: AIP
摘要:
We demonstrate the use of low-energy cathodoluminescence spectroscopy (CLS) to study optical transitions at defect bonding arrangements atSi–SiO2interfaces prepared by low-temperature plasma deposition. Variable-depth excitation achieved by different electron injection energies provides a clear distinction between luminescence derived from (i) the near-interface region of the oxide film, (ii) theSi–SiO2interface, and (iii) the underlying crystalline Si substrate. Cathodoluminescence bands at ∼0.8 and 1 eV are assigned to interfacial Si atom dangling bonds with different numbers of back-bonded Si and O atoms. CLS also reveals higher photon energy features: two bands at ∼1.9 and 2.7 eV assigned to suboxide bonding defects in the as-grown oxide films, as well as a substrate-related feature at ∼3.4 eV. The effects of hydrogenation at 400 °C and rapid thermal annealing at 900 °C, and especially the combination of both process steps is shown to dramatically reduce the intensities of the CLS features assigned to interfacial and suboxide bonding defects. ©1998 American Institute of Physics.
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