Highly reflectiveGaN/Al0.34Ga0.66Nquarter-wave reflectors grown by metal organic chemical vapor deposition
作者:
T. Someya,
Y. Arakawa,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 25
页码: 3653-3655
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122852
出版商: AIP
数据来源: AIP
摘要:
Quarter-wave reflectors consisting of sets of GaN andAl0.34Ga0.66Nlayers have been grown on sapphire substrates by atmospheric-pressure metal organic chemical vapor deposition. A periodic structure with flat interfaces was observed by high-resolution scanning electron microscopy. X-ray diffraction measurements were performed to characterize the structures, from which the Al contentxin theAlxGa1−xNlayers was determined to be 0.34. No cracks could be seen on the surface of the reflectors by optical microscopy. The measured peak reflectivity at 390 nm increases with the number of pairs and reaches as high as96±2&percent;in the 35-pair reflector. ©1998 American Institute of Physics.
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