Organometallic chemical vapor deposition of strontium titanate
作者:
W. A. Feil,
B. W. Wessels,
L. M. Tonge,
T. J. Marks,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 8
页码: 3858-3861
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345034
出版商: AIP
数据来源: AIP
摘要:
SrTiO3thin films were deposited by low‐pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate)2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 &mgr;m/h were obtained on (0001) sapphire substrates at 600–850 °C. Highly textured SrTiO3films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.
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