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Organometallic chemical vapor deposition of strontium titanate

 

作者: W. A. Feil,   B. W. Wessels,   L. M. Tonge,   T. J. Marks,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 8  

页码: 3858-3861

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345034

 

出版商: AIP

 

数据来源: AIP

 

摘要:

SrTiO3thin films were deposited by low‐pressure organometallic chemical vapor deposition. Titanium isopropoxide, Sr(dipivaloylmethanate)2, oxygen, and water vapor were used as reactants, and argon was used as a carrier gas. Growth rates ranging from 0.3 to 4.5 &mgr;m/h were obtained on (0001) sapphire substrates at 600–850 °C. Highly textured SrTiO3films with a [111] orientation were obtained at a growth temperature of 800 °C. The growth parameters which influenced the composition, phase stability, morphology, and texture of the thin films were examined.

 

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