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Anisotropic etching of GaAs using a hot Cl2molecular beam

 

作者: Tetsuo Ono,   Hideo Kashima,   Susumu Hiraoka,   Keizo Suzuki,   Andreas Jahnke,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 2798-2801

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585647

 

出版商: American Vacuum Society

 

关键词: ETCHING;GALLIUM ARSENIDES;CHLORINE MOLECULES;ANISOTROPY;MOLECULAR BEAMS;MILLI EV RANGE;GaAs

 

数据来源: AIP

 

摘要:

Anisotropic etching of GaAs(100) is performed using a hot Cl2molecular beam produced by free expansion of gas heated in a furnace. The etch rate is 1.5 μm/min at a furnace temperature of 800 °C and a substrate temperature of 120 °C. An aspect ratio of ten and an almost smooth bottom surface are obtained under this condition.

 

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